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| AP09N90CW Advanced Power Electronics Corp. Minimize On-resistance Fast Switching Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 900V 1.4 7.6A G S Description AP09N90C provides minimize on-state resistance , superior switching performance and high efficiency switching power supply applications. TO-3P package is preferred for commercial-industrial applications and provides greater distance between pins to meet the requirements of most safety specifications. G D S TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 900 30 7.6 4.8 25 208 1.6 2 Units V V A A A W W/ mJ A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 120 6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.60 40 Unit /W /W Data & specifications subject to change without notice 200731031 AP09N90CW Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 900 2 - Typ. 0.74 1.25 3.6 50.7 12 16 20 16 65 27 3097 516 19 Max. Units 1.4 4 10 100 100 80 5000 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125 C) o o VGS=10V, ID=3.6A VDS=VGS, ID=250uA VDS=10V, ID=3.6A VDS=900V, VGS=0V VDS=720V, VGS=0V VGS= 30V ID=7.2A VDS=540V VGS=10V VDD=450V ID=7.2A RG=6.8,VGS=10V RD=62.5 VGS=0V VDS=15V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol VSD trr Qrr Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=6.8mH , RG=25 , IAS=6A. 3.Pulse width <300us , duty cycle <2%. Parameter Forward On Voltage 3 Test Conditions IS=7.2A, VGS=0V IS=7.2A, VGS=0V, dI/dt=100A/s Min. - Typ. 673 9.6 Max. Units 1.5 A ns C Reverse Recovery Time Reverse Recovery Charge AP09N90CW 10 5 T C =25 o C 8 10V 7.0V 5.0V ID , Drain Current (A) T C =150 o C 4 ID , Drain Current (A) 10V 7.0V 5.0V 4.5V 6 3 4 4.5V 2 V G =4.0V 1 2 V G =4.0V 0 0 2 4 6 8 10 12 14 16 18 0 0 2 4 6 8 10 12 14 16 18 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3.0 I D =3.6A 2.5 V G =10V 1.1 Normalized BVDSS (V) Normalized RDS(ON) 2.0 1 1.5 1.0 0.9 0.5 0.8 -50 0 50 100 150 0.0 -50 0 50 100 150 Junction Temperature ( o C) T j , Junction Temperature ( o C) Fig 3. Normalized BV DSS v.s. Junction Fig 4. Normalized On-Resistance 100 4 10 3 IS (A) T j = 150 o C T j = 25 o C 1 VGS(th) (V) 2 1 1.4 1.6 0.1 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP09N90CW 15 10000 f=1.0MHz I D =7.2A VGS , Gate to Source Voltage (V) 12 9 V DS =180V V DS =360V V DS =540V C (pF) Ciss 1000 6 100 Coss 3 Crss 0 10 0 20 40 60 80 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10 Normalized Thermal Response (Rthjc) DUTY=0.5 10ms ID (A) 1 0.2 0.1 100ms 1s DC 0.1 0.05 PDM t 0.02 0.1 T Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse T c =25 C Single Pulse 0.01 0.1 1 10 100 1000 10000 o 0.01 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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